Kingston ValueRAM 4GB 1600MHz DDR3 CL11 DIMM Single RAM
• JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
• VDDQ = 1.5V (1.425V ~ 1.575V)
• 800MHz fCK for 1600Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 11, 10, 9, 8, 7, 6
• Programmable Additive Latency: 0, CL – 2, or CL – 1 clock
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB : Height 0.740” (18.75mm) or 1.180” (30.00mm)
This document describes ValueRAM’s 512M x 64-bit (4GB)
DDR3-1600 CL11 SDRAM (Synchronous DRAM) 1Rx8, memory
module, based on eight 512M x 8-bit FBGA components. The
SPD is programmed to JEDEC standard latency DDR3-1600
timing of 11-11-11 at 1.5V. This 240-pin DIMM uses gold
contact fingers. The electrical and mechanical specifications
are as follows:
SPECIFICATIONS
CL(IDD): 11 cycles
Row Cycle Time (tRCmin): 48.125ns(min.)
Refresh to Active/Refresh Command Time (tRFCmin): 260ns(min.)
Row Active Time (tRASmin): 35ns(min.)
Maximum Operating Power: TBD W*
UL Rating: 94 V – 0
Operating Temperature: 0 C to +85 C
Storage Temperature: -55 C to +100 C
*Power will vary depending on the SDRAM used.
| Weight | 0.5 kg |
|---|
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