Kingston ValueRAM 4GB 2666MHz DDR4 CL19 SODIMM Single RAM
• Power Supply: VDD = 1.2V Typical
• VDDQ = 1.2V Typical
• VPP = 2.5V Typical
• VDDSPD = 2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die VREFDQ generation and calibration
• Single-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• 8 internal banks; 2 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• PCB: Height 1.18” (30.00mm)
• RoHS Compliant and Halogen-Free
This document describes ValueRAM’s KVR26S19S6/4 as a
512M x 64-bit (4GB) DDR4-2666 CL19 SDRAM (Synchronous
DRAM), 1Rx16, memory module, based on four 512M x 16-bit
FBGA components. The SPD is programmed to JEDEC
standard latency DDR4-2666 timing of 19-19-19 at 1.2V. This
260-pin SODIMM uses gold contact fingers. The electrical and
mechanical specifications are as follows:
SPECIFICATIONS
CL(IDD): 19 cycles
Row Cycle Time (tRCmin): 45.75ns(min.)
Refresh to Active/Refresh Command Time (tRFCmin): 350ns(min.)
Row Active Time (tRASmin): 32ns(min.)
Maximum Operating Power: TBD W*
UL Rating: 94 V – 0
Operating Temperature: 0 C to +85 C
Storage Temperature: -55 C to +100 C
*Power will vary depending on the SDRAM used.
| Weight | 0.5 kg |
|---|
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