Showing 1585–1600 of 3285 results

    • Kingston NV1 NVMe PCIe SSD

      500GB500GB
      1TB1TB
      2TB2TB

      NVMe PCIe SSD Performance 2-year limited warranty Up to 2,100MB/s Read, 1,700MB/s Write Product contains drive only; cloning software not included.

    • Kingston SSD 240GB A400 SATA3 2.5″ SA400S37/240G

      Capacity 240GB SATA Rev 3.0 500MB/s read, 350MB/s write Cloning software not included Part Number: SA400S37/240G

    • Kingston SSD 480GB, 960GB A400 SATA 2.5″

      53.7% ر.س 80ر.س 69
      480GB480GB
      960GB960GB

      A400 SATA SSD in 2.5″ and M.2 Form Factors Kingston’s A400 solid-state drive dramatically improves the responsiveness of your existing system with incredible boot, loading and transfer times compared to mechanical hard drives. Powered by a latest-gen controller for read and write speeds of up to 500MB/s and 450MB/s1, this SSD is 10x faster than a traditional hard drive for higher performance, ultra-responsive multi-tasking and an overall faster system. Also more reliable and durable than a hard drive, A400 is available in multiple…

    • Kingston SSD A400 M.2 Solid State Drive, 240 GB

      33.6% ر.س 40ر.س 79

      Digital storage capacity 240 GB Compatible devices Desktop Hard disk interface Solid State Brand Kingston Series M.2 2280 Commodity Connectivity technology SATA Hard disk size 240 GB Form Factor M.2

    • Kingston Technology 1000G Fury Renegade PCIE 4.0 NVMe M2 SSD

      Product Type: Solid State Drive Storage Capacity: 1 TB Drive Interface: PCI Express NVMe Form Factor: M.2 2280 Product Family: FURY Renegade TAA Compliant: Yes Read Rate 7300 MB/s  Write  Rate 6000 MB/s

    • Kingston ValueRAM 16GB 2666MHz DDR4 CL19 SODIMM Single RAM

      • Power Supply: VDD = 1.2V Typical • VDDQ = 1.2V Typical • VPP = 2.5V Typical • VDDSPD = 2.2V to 3.6V • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Low-power auto self refresh (LPASR) • Data bus inversion (DBI) for data bus • On-die VREFDQ generation and calibration • Dual-rank • On-board I2 serial presence-detect (SPD) EEPROM • 16 internal banks; 4 groups of 4 banks each • Fixed burst chop (BC) of 4 and…

    • Kingston ValueRAM 16GB 3200MHz DDR4 CL22 DIMM Single RAM

      • Power Supply: VDD = 1.2V Typical • VDDQ = 1.2V Typical • VPP = 2.5V Typical • VDDSPD = 2.2V to 3.6V • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Low-power auto self refresh (LPASR) • Data bus inversion (DBI) for data bus • On-die VREFDQ generation and calibration • Single-rank • On-board I2 serial presence-detect (SPD) EEPROM • 16 internal banks; 4 groups of 4 banks each • Fixed burst chop (BC) of 4 and…

    • Kingston ValueRAM 32GB 2666MHz DDR4 CL19 DIMM Single RAM

      32.2% ر.س 193ر.س 406

      • Power Supply: VDD = 1.2V Typical • VDDQ = 1.2V Typical • VPP = 2.5V Typical • VDDSPD = 2.2V to 3.6V • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Low-power auto self refresh (LPASR) • Data bus inversion (DBI) for data bus • On-die VREFDQ generation and calibration • Dual-rank • On-board I2 serial presence-detect (SPD) EEPROM • 16 internal banks; 4 groups of 4 banks each • Fixed burst chop (BC) of 4 and…

    • Kingston ValueRAM 32GB 2666MHz DDR4 CL19 SODIMM Single RAM

      • Power Supply: VDD = 1.2V Typical • VDDQ = 1.2V Typical • VPP = 2.5V Typical • VDDSPD = 2.2V to 3.6V • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Low-power auto self refresh (LPASR) • Data bus inversion (DBI) for data bus • On-die VREFDQ generation and calibration • Dual-rank • On-board I2 serial presence-detect (SPD) EEPROM • 16 internal banks; 4 groups of 4 banks each • Fixed burst chop (BC) of 4 and…

    • Kingston ValueRAM 32GB 3200MHz DDR4 CL22 DIMM Single RAM

      21.5% ر.س 90ر.س 329

      • Power Supply: VDD = 1.2V Typical • VDDQ = 1.2V Typical • VPP = 2.5V Typical • VDDSPD = 2.2V to 3.6V • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Low-power auto self refresh (LPASR) • Data bus inversion (DBI) for data bus • On-die VREFDQ generation and calibration • Dual-rank • On-board I2 serial presence-detect (SPD) EEPROM • 16 internal banks; 4 groups of 4 banks each • Fixed burst chop (BC) of 4 and…

    • Kingston ValueRAM 4GB 1600MHz DDR3 CL11 DIMM Single RAM

      • JEDEC standard 1.5V (1.425V ~1.575V) Power Supply • VDDQ = 1.5V (1.425V ~ 1.575V) • 800MHz fCK for 1600Mb/sec/pin • 8 independent internal bank • Programmable CAS Latency: 11, 10, 9, 8, 7, 6 • Programmable Additive Latency: 0, CL – 2, or CL – 1 clock • 8-bit pre-fetch • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using…

    • Kingston ValueRAM 4GB 2666MHz DDR4 CL19 DIMM Single RAM

      • Power Supply: VDD = 1.2V Typical • VDDQ = 1.2V Typical • VPP = 2.5V Typical • VDDSPD = 2.2V to 3.6V • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Low-power auto self refresh (LPASR) • Data bus inversion (DBI) for data bus • On-die VREFDQ generation and calibration • Single-rank • On-board I2 serial presence-detect (SPD) EEPROM • 8 internal banks; 2 groups of 4 banks each • Fixed burst chop (BC) of 4 and…

    • Kingston ValueRAM 4GB 2666MHz DDR4 CL19 SODIMM Single RAM

      • Power Supply: VDD = 1.2V Typical • VDDQ = 1.2V Typical • VPP = 2.5V Typical • VDDSPD = 2.2V to 3.6V • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Low-power auto self refresh (LPASR) • Data bus inversion (DBI) for data bus • On-die VREFDQ generation and calibration • Single-rank • On-board I2 serial presence-detect (SPD) EEPROM • 8 internal banks; 2 groups of 4 banks each • Fixed burst chop (BC) of 4 and…

    • Kingston ValueRAM 8GB 1600MHz DDR3 CL11 DIMM Single RAM

      6.7% ر.س 15ر.س 209

      • JEDEC standard 1.5V  Power Supply • VDDQ = 1.5V • 800MHz fCK for 1600Mb/sec/pin • 8 independent internal bank • Programmable CAS Latency: 11, 10, 9, 8, 7, 6 • Programmable Additive Latency: 0, CL – 2, or CL – 1 clock • 8-bit pre-fetch • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] • Bi-directional…

    • Kingston ValueRAM 8GB 1600MHz DDR3L CL11 SODIMM Single RAM

      5.2% ر.س 11ر.س 199

      • JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power Supply • VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) • 800MHz fCK for 1600Mb/sec/pin • 8 independent internal bank • Programmable CAS Latency: 11, 10, 9, 8, 7, 6 • Programmable Additive Latency: 0, CL – 2, or CL – 1 clock • 8-bit pre-fetch • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does…

    • Kingston ValueRAM 8GB 2666MHz DDR4 CL19 DIMM Single RAM

      35.2% ر.س 44ر.س 81

      • Power Supply: VDD = 1.2V Typical • VDDQ = 1.2V Typical • VPP = 2.5V Typical • VDDSPD = 2.2V to 3.6V • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Low-power auto self refresh (LPASR) • Data bus inversion (DBI) for data bus • On-die VREFDQ generation and calibration • Single-rank • On-board I2 serial presence-detect (SPD) EEPROM • 8 internal banks; 2 groups of 4 banks each • Fixed burst chop (BC) of 4 and…

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